Popis předmětu - XP37CAD

Přehled studia | Přehled oborů | Všechny skupiny předmětů | Všechny předměty | Seznam rolí | Vysvětlivky               Návod
XP37CAD Pokročilé metody analýzy a optimalizace elektronických obvodů pomocí počítačového návrhu
Role:S Rozsah výuky:2P+3D
Katedra:13137 Jazyk výuky:EN
Garanti:Dobeš J. Zakončení:Z,ZK
Přednášející:Dobeš J. Kreditů:3
Cvičící:Dobeš J. Semestr:Z

Anotace:

The first part of the subject deals with contemporary models of both classical semiconductor elements (in submicron domain) and special microwave transistors as HBT, pHEMT etc. Moreover, models of power MOS (LDMOS) transistors are also defined and characterizing the elements by X-parameters is included as well. The modeling part of the subject is completed by characterization nano-scale elements, including noise models, and by a description of memristors, memcapacitors and meminductors. The second part of the subject contains algorithms for solving nonlinear stiff systems of differential-algebraic equations in implicit form combined with nonstandard sensitivity analysis in time domain. The sensitivity analysis in the frequency domain is also included as well as nonstandard sensitivity analysis of noise figure. Attention is also given to steady-state algorithms, in particular, their more difficult form usable for autonomous circuits. The analytic methods are naturally complemented by single- and multi-objective optimizations. Up to four-dimensional optimizations are demonstrated on very complicated, but technically useful tasks from the microwave area including power RF amplifiers.

Osnovy přednášek:

1. The concept of the compact modeling. Contemporary models of PN and Schottky diodes based on a subtraction of the
forward and reverse currents.
2. State-of-the-art models of BJTs and JFETs. Modeling the delay of microwave transistors using a second-order Bessel
differential equation, modeling the two-gate JFETs.
3. Contemporary models of MOSFETs, ultra-short-channel models based on scalable EKV and BSIM models, modeling
power LDMOSFETs.
4. Modeling special ultra-high frequency semiconductor devices like HBTs.
5. Modeling other circuit elements with state-of-the-art X parameters.
6. Modeling nano-semiconductor devices and their technology.
7. Noise modeling, especially for high-frequency and nanoscale devices.
8. Modeling the memristors, mem-capacitors and mem-inductors, and their utilization in new breakthrough circuits.
9. Numerical methods for solving implicit STIFF systems of differential-algebraic nonlinear circuit equations.
10. Sensitivity analysis in the frequency and domains, advanced methods of the noise-figure sensitivity analysis.
11. Single-objective optimization, and usage the optimization for extracting the parameters of semiconductor devices.
12. Advanced multi-objective optimization in the frequency and time domains.
13. Special methods for computer-aided design of power circuits (switched ones, etc.).
14. Using CAD for practical design of radio-frequency circuits.

Osnovy cvičení:

Literatura:

• Muhammad H. Rashid: SPICE for Power Electronics and Electric Power. CRC Press, 2017. • Krzysztof Iniewski: Nano-Semiconductors: Devices and Technology. CRC Press, 2017. • Gennady Gildenblat: Compact Modeling. Springer, 2010. • Matthias Rudolph: Introduction to Modeling HBTs. Artech House, Boston, 2006. • L.F. Shampine: Numerical Solution of Ordinary Differential Equations. Chapman and Hall/CRC, 2011. • Brian Kolo: Single & Multiple Objective Optimization. Weatherford Press, 2010

Požadavky:

Předmět je zahrnut do těchto studijních plánů:

Plán Obor Role Dop. semestr
DOKP Před zařazením do oboru S
DOKK Před zařazením do oboru S


Stránka vytvořena 30.11.2020 17:50:52, semestry: L/2021-2, Z,L/2020-1, L/2019-20, Z/2021-2, připomínky k informační náplni zasílejte správci studijních plánů Návrh a realizace: I. Halaška (K336), J. Novák (K336)
Za obsah odpovídá: doc. Ing. Ivan Jelínek, CSc.