Subject description - AD0M13MKV

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AD0M13MKV Advanced Components of Power Electronic Extent of teaching:14KP+6KL
Guarantors:  Roles:V Language of
teaching:
CS
Teachers:  Completion:Z,ZK
Responsible Department:13113 Credits:5 Semester:L

Anotation:

Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristics and parameters, conditions for reliable operation. Connection of devices in parallel and in series. Operating reliability of power components and equipments.

Study targets:

To give students detail knowledge about structure, functions and basic parameters of power semiconductor devices

Course outlines:

1. Introduction. Physics of basic structures
2. Materials for power devices (Si, SiC, GaN)
3. Power diodes (static and dynamic characteristics)
4. Schottky diodes and combined structures
5. Power transistors and thyristors
6. Modern thyristor type devices (GTO, IGCT, LTT)
7. Power MOSFETs (VDMOS, TMOS, SJMOS)
8. IGBTs. PT and NPT structures.
9. Devices for high frequency operation (LD MOS, HJT)
10. Power integration (PIC, IPM)
11. The cooling of power device.
12. Device encapsulations and heat sinks
13. Device connection in series and in parallel
14. Operating reliability of power devices and components

Exercises outline:

1. Introduction
2. The first group of laboratory tasks - theory and ezpalation
3. The sekond group of laboratory tasks - theory and explanation
4. The third group of laboratory tasks - theory and explanation
5. Measuring of temperature dependence of reverse characteristics of thyristors and diodes
6. Measuring of temperature dependence of forward characteristics of thyristors and diodes
7. Measuring of dynamic paprameters during diode reverse recovery process
8. Measuring of static characteristics of BJT, MOSFET a IGBT in dependence on temperature
9. Measuring og dynamec parameters of semiconductor switches
10. Meausring of the trajectory of the operating point during device switching
11. Measuring of pasive devioce parametrs
12. Measuring of transient thermal impedance
13. Materiále and construction of components - exhibition
14. Closing

Literature:

1. Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices.
Chichester: J.Wiley & Sons. 1999
2. Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing
Company.1995

Requirements:

A student has to obtain a credit before an examination

Webpage:

http://ocw.cvut.cz/moodle/course/enrol.php?id=292

Subject is included into these academic programs:

Program Branch Role Recommended semester
MKEEM1 Technological Systems V
MKEEM5 Economy and Management of Electrical Engineering V
MKEEM4 Economy and Management of Power Engineering V
MKEEM3 Electrical Power Engineering V
MKEEM2 Electrical Machines, Apparatus and Drives V
MKKME1 Wireless Communication V
MKKME5 Systems of Communication V
MKKME4 Networks of Electronic Communication V
MKKME3 Electronics V
MKKME2 Multimedia Technology V
MKOI1 Artificial Intelligence V
MKOI5 Software Engineering V
MKOI4 Computer Graphics and Interaction V
MKOI3 Computer Vision and Image Processing V
MKOI2 Computer Engineering V
MKKYR4 Aerospace Systems V
MKKYR1 Robotics V
MKKYR3 Systems and Control V
MKKYR2 Sensors and Instrumentation V


Page updated 6.12.2019 17:52:32, semester: Z,L/2020-1, L/2018-9, Z,L/2019-20, Send comments about the content to the Administrators of the Academic Programs Proposal and Realization: I. Halaška (K336), J. Novák (K336)