Subject description - A0M13MKV

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A0M13MKV Advanced Components of Power Electronic Extent of teaching:2P+2L
Guarantors:  Roles:V Language of
teaching:
CS
Teachers:  Completion:Z,ZK
Responsible Department:13113 Credits:5 Semester:L

Anotation:

Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristics and parameters, conditions for reliable operation. Connection of devices in parallel and in series. Operating reliability of power components and equipments.

Study targets:

To give students detail knowledge about structure, functions and basic parameters of power semiconductor devices

Course outlines:

1. Introduction. Physics of basic structures
2. Materials for power devices (Si, SiC, GaN)
3. Power diodes (static and dynamic characteristics)
4. Schottky diodes and combined structures
5. Power transistors and thyristors
6. Modern thyristor type devices (GTO, IGCT, LTT)
7. Power MOSFETs (VDMOS, TMOS, SJMOS)
8. IGBTs. PT and NPT structures.
9. Devices for high frequency operation (LD MOS, HJT)
10. Power integration (PIC, IPM)
11. The cooling of power device.
12. Device encapsulations and heat sinks
13. Device connection in series and in parallel
14. Operating reliability of power devices and components

Exercises outline:

1. Introduction
2. The first group of laboratory tasks - theory and ezpalation
3. The sekond group of laboratory tasks - theory and explanation
4. The third group of laboratory tasks - theory and explanation
5. Measuring of temperature dependence of reverse characteristics of thyristors and diodes
6. Measuring of temperature dependence of forward characteristics of thyristors and diodes
7. Measuring of dynamic paprameters during diode reverse recovery process
8. Measuring of static characteristics of BJT, MOSFET a IGBT in dependence on temperature
9. Measuring og dynamec parameters of semiconductor switches
10. Meausring of the trajectory of the operating point during device switching
11. Measuring of pasive devioce parametrs
12. Measuring of transient thermal impedance
13. Materiále and construction of components - exhibition
14. Closing

Literature:

1. Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices.
Chichester: J.Wiley & Sons. 1999
2. Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing
Company.1995

Requirements:

A student has to obtain a credit before an examination

Webpage:

https://moodle.fel.cvut.cz/courses/A0M13MKV

Keywords:

power semiconductor devices, diodes, thyristors, IGBT, IGCT, MOS, SJ FET, cooling, reliability

Subject is included into these academic programs:

Program Branch Role Recommended semester
MPBIO1 Biomedical Informatics V
MPBIO2 Biomedical Engineering V
MPIB Common courses V
MPKME1 Wireless Communication V
MPKME5 Systems of Communication V
MPKME4 Networks of Electronic Communication V
MPKME3 Electronics V
MPKME2 Multimedia Technology V
MPEEM1 Technological Systems V
MPEEM5 Economy and Management of Electrical Engineering V
MPEEM4 Economy and Management of Power Engineering V
MPEEM3 Electrical Power Engineering V
MPEEM2 Electrical Machines, Apparatus and Drives V
MPKYR4 Aerospace Systems V
MPKYR1 Robotics V
MPKYR3 Systems and Control V
MPKYR2 Sensors and Instrumentation V


Page updated 12.12.2019 15:52:11, semester: Z,L/2020-1, L/2018-9, Z,L/2019-20, Send comments about the content to the Administrators of the Academic Programs Proposal and Realization: I. Halaška (K336), J. Novák (K336)