Subject description - AE0M13MKV

Summary of Study | Summary of Branches | All Subject Groups | All Subjects | List of Roles | Explanatory Notes               Instructions
AE0M13MKV Advanced Components of Power Electronic Extent of teaching:2P+2L
Guarantors:  Roles:V Language of
teaching:
EN
Teachers:  Completion:Z,ZK
Responsible Department:13113 Credits:5 Semester:L

Anotation:

Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristics and parameters, conditions for reliable operation. Connection of devices in parallel and in series. Operating reliability of power components and equipments.

Study targets:

To give students detail knowledge about structure, functions and basic parameters of power semiconductor devices

Course outlines:

1. Introduction. Physics of basic structures
2. Materials for power devices (Si, SiC, GaN)
3. Power diodes (static and dynamic characteristics)
4. Schottky diodes and combined structures
5. Power transistors and thyristors
6. Modern thyristor type devices (GTO, IGCT, LTT)
7. Power MOSFETs (VDMOS, TMOS, SJMOS)
8. IGBTs. PT and NPT structures.
9. Devices for high frequency operation (LD MOS, HJT)
10. Power integration (PIC, IPM)
11. The cooling of power device.
12. Device encapsulations and heat sinks
13. Device connection in series and in parallel
14. Operating reliability of power devices and components

Exercises outline:

1. Introduction
2. The first group of laboratory tasks - theory and ezpalation
3. The sekond group of laboratory tasks - theory and explanation
4. The third group of laboratory tasks - theory and explanation
5. Measuring of temperature dependence of reverse characteristics of thyristors and diodes
6. Measuring of temperature dependence of forward characteristics of thyristors and diodes
7. Measuring of dynamic paprameters during diode reverse recovery process
8. Measuring of static characteristics of BJT, MOSFET a IGBT in dependence on temperature
9. Measuring og dynamec parameters of semiconductor switches
10. Meausring of the trajectory of the operating point during device switching
11. Measuring of pasive devioce parametrs
12. Measuring of transient thermal impedance
13. Materiále and construction of components - exhibition
14. Closing

Literature:

1. Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices.
Chichester: J.Wiley & Sons. 1999
2. Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing
Company.1995

Requirements:

A student has to obtain a credit before an examination

Webpage:

https://moodle.fel.cvut.cz/courses/AE0M13MKV

Subject is included into these academic programs:

Program Branch Role Recommended semester
MEKME1 Wireless Communication V
MEKME5 Systems of Communication V
MEKME4 Networks of Electronic Communication V
MEKME3 Electronics V
MEKME2 Multimedia Technology V
MEOI1 Artificial Intelligence V
MEOI5NEW Software Engineering V
MEOI5 Software Engineering V
MEOI4 Computer Graphics and Interaction V
MEOI3 Computer Vision and Image Processing V
MEOI2 Computer Engineering V
MEEEM1 Technological Systems V
MEEEM5 Economy and Management of Electrical Engineering V
MEEEM4 Economy and Management of Power Engineering V
MEEEM3 Electrical Power Engineering V
MEEEM2 Electrical Machines, Apparatus and Drives V
MEKYR4 Aerospace Systems V
MEKYR1 Robotics V
MEKYR3 Systems and Control V
MEKYR2 Sensors and Instrumentation V


Page updated 6.12.2019 17:52:32, semester: Z,L/2020-1, L/2018-9, Z,L/2019-20, Send comments about the content to the Administrators of the Academic Programs Proposal and Realization: I. Halaška (K336), J. Novák (K336)