Dr. Ing. Ahmed Tamer AlAsqalani, Ph.D.

All publications

Authors: Li, B. S., Sen, H., Dr. Nabil Daghbouj, Ph.D., Dr. Ing. Ahmed Tamer AlAsqalani, Ph.D., Lorincik, J., Karlík, M., Ge, F., Zhang, L., Sofer, Z., Elantyev, I., Callisti, M., prof. Ing. Tomáš Polcar, Ph.D.,
Publication: Scripta Materialia. 2022, 218 ISSN 1359-6462.
Year: 2022

DOI: 10.1016/j.scriptamat.2022.114805
Link: https://doi.org/10.1016/j.scriptamat.2022.114805
Department: Department of Control Engineering
Annotation:
SiC is considered a perspective material in advanced nuclear systems as well as for electronic or spintronic applications, which require an ion implantation process. In this regard, two sets of 6H-SiC samples were implanted with i) 2.5 MeV Fe ions and ii) 2.5 MeV Fe ions and co-implanted 500 keV He ions at room temperature and then annealed at 1500 degrees C for 2 h. The microstructure evolution and Fe diffusion behavior before and after annealing were characterized and analyzed. After annealing, Fe concentration is enhanced close to the surface in the Fe-implanted sample, whereas in the co-implanted system, Fe atoms are redistributed into two distinct, spatially separated regions (close to the surface, and around the He-induced defects). The reason behind this finding is explained from an energetic point of view by using ab initio simulations. Technologically, the preexisting cavities can be used to control the Fe diffusion.