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prof. Ing. Jan Vobecký, DrSc.

Vice Dean for Cooperation with Industry and Commercialization

All publications

On the Commutation of Thyristors for High-Voltage Direct Current Transmission (HVDC)

  • DOI: 10.1109/TED.2023.3336284
  • Link: https://doi.org/10.1109/TED.2023.3336284
  • Department: Department of Microelectronics
  • Annotation:
    The commutation of 8.5 kV, 2.5 kA thyristors is experimentally investigated in a wide range of operation conditions. The dependence of the commutation turn-off time tq on the commutation di/dt, reverse voltage during commutation, forward blocking dv/dt, and temperature is presented in the range of 20 to 800 µs. The tq of phase control thyristors (PCT) is carried out for three application relevant combinations of the ON-state voltage VT and recovery time Qrr and compared with that of the bidirectional phase control thyristor (BiPCT). Growth coefficients of tq are provided for practical magnitudes of di/dt, dv/dt, and temperature to be used in the design of high-power converters.

Epoxy Mold Compound Encapsulation Concept for Large-Area Power Devices

  • Authors: Dobrzynska, J., prof. Ing. Jan Vobecký, DrSc., Gradinger, T., Guillon, D., Corvasce, C.
  • Publication: IEEE Transactions on Components, Packaging and Manufacturing Technology. 2022, 12(4), 602-609. ISSN 2156-3950.
  • Year: 2022
  • DOI: 10.1109/TCPMT.2022.3160102
  • Link: https://doi.org/10.1109/TCPMT.2022.3160102
  • Department: Department of Microelectronics
  • Annotation:
    A new concept for encapsulation of discrete bipolar high-power devices using Epoxy Mold Compound is demonstrated on silicon 4.5 kV press-pack fast recovery diodes with wafer diameter up to 130 mm and molybdenum pressure-release buffer up to 140 mm in diameter. The silicon wafers can be bonded to molybdenum disks using low-temperature bonding process or they can be fixed mechanically by the epoxy mold compound without direct bonding (free-floating). The encapsulated devices can be applied as housing-less or they can be inserted into hermetic ceramic housings with pole piece of 143 mm. The design aspects relevant for reliable operation are presented using multi-physics simulation in COMSOL. The summary of passed reliability tests including electrical testing in true application conditions demonstrates readiness of the concept for demanding applications in the temperature range up to 140 °C.

Fast Recovery Diodes for High-Current High-Voltage Insulated Gate Bipolar Transistors

  • DOI: 10.1109/LED.2022.3187159
  • Link: https://doi.org/10.1109/LED.2022.3187159
  • Department: Department of Microelectronics
  • Annotation:
    Silicon Fast Recovery Diodes of 4.5 kV class were produced with diameter of active area between 100 and 150 mm. Wide Safe Operation Area is experimentally demonstrated with IGBT operated at di/dt above 4 kA/μs for which diode recovery losses and peak power show decreasing trend above the diode average rating current of 5 kA, which is half of Insulated Gate Bipolar Transistor (IGBT) short circuit current. The role of IGBT switch and diode design on the robustness enhanced by increased diode area, is explained. The experimental results are confirmed by device simulation (TCAD).

Impact of Defect Engineering on High-Power Devices

  • Department: Department of Microelectronics
  • Annotation:
    Defect engineering know-how is important for the lifetime control by electron, proton and helium irradiation to adjust the ratio between the ON-state and turn-off losses according to the application demands, increase the dynamic safe operation area to avoid the failures during hard switching of inductive load in power converters or to facilitate serial connection of up to one hundred thyristors for the transmission systems with line voltages up to 1100 kV.

On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon

  • Authors: Balestra, L., Reggiani, S., Gnudi, A., Gnani, E., Dobrzynska, J., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Solid-State Electronics. 2022, 193 1-7. ISSN 0038-1101.
  • Year: 2022
  • DOI: 10.1016/j.sse.2022.108284
  • Link: https://doi.org/10.1016/j.sse.2022.108284
  • Department: Department of Microelectronics
  • Annotation:
    Diamond-Like Carbon (DLC) is well established material for the passivation of high voltage negative bevelled power diode. In our previous works, the conduction mechanism of the DLC has been carefully described through the characterization and the physical modelling of Metal-Insulator-Semiconductor (MIS) structures. In addition, the effects on the breakdown voltage and leakage current have been clarified comparing the available experiments with numerical simulations. However, the role played by the DLC on the breakdown voltage temperature dependence is still lacking. In this work, we addressed the latter issue and found out an anomalous reduction of the temperature dependence which is clearly ascribed to the DLC behaviour. The temperature dependencies of carrier transport in the DLC have been further investigated in order to explain the experimental results. The observed effect might be related to the release of the trapped charges with increasing temperatures or to a different temperature dependence of the DLC mobility which is function of the distance from the Si/DLC interface. TCAD simulations are used to corroborate such assumptions.

Impact of Defect Engineering on High-Power Devices

  • DOI: 10.1002/pssa.202100169
  • Link: https://doi.org/10.1002/pssa.202100169
  • Department: Department of Microelectronics
  • Annotation:
    Processing of electrical power at megawatt to gigawatt level in the industry, traction, and transmission and distribution requires high-power devices with blocking capability up to 10 kV. The mainstream ones require high purity silicon wafers with the lowest possible defect content (contamination) and maximal homogeneity of resistivity and thickness. To satisfy current ratings in typical range 1 6 kA, single diode or thyristor may occupy nearly the whole 100 to 150 mm silicon wafer. Beside the doping profile optimization and gettering in the front-end processes, the devices are subject to defect engineering to adjust uniformly or locally the recombination lifetime of carriers. In IGBTs, it is also about dopant activation below 500 °C. Satisfaction of all extremal demands laid on those devices would not be possible without the knowledge developed by defect engineering community in the past decades. Some relevant industrial examples of screening the contamination in typical production of silicon high-power devices are demonstrated as well as the advanced defect engineering methods for increasing device functionality and power density.

Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range

  • Authors: Balestra, L., Reggiani, S., Gnudi, A., Gnani, E., Dobrzynska, J., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: IEEE Journal of the Electron Devices Society. 2021, 9 431-440. ISSN 2168-6734.
  • Year: 2021
  • DOI: 10.1109/JEDS.2021.3073232
  • Link: https://doi.org/10.1109/JEDS.2021.3073232
  • Department: Department of Microelectronics
  • Annotation:
    The diamond-like carbon (DLC) is important for passivation of junction termination in high power devices due to its excellent electrical, mechanical, and thermal properties. While the role of conductivity and polarization of the DLC layer on the blocking capability of a p-n junction has been explained recently, the thermal behavior still needs to be addressed. For this purpose, the diode leakage current was measured on large area power diodes with negative bevel coated by the DLC in a typical industrial range between 300 and 413 K. An unusual deviation from the expected Arrhenius law was experimentally observed. A predictive TCAD model, which incorporates the effect of the DLC layer, has been developed to study the impact of the DLC layer parameters on diode thermal performance. Both the electrostatic features and charge transport mechanisms through and along the DLC/Silicon interface have been modeled over a wide range of temperatures. Different DLC/Silicon doping combinations have been analyzed to explain the main effects determining the temperature dependence of diode leakage

Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes

  • DOI: 10.1109/TED.2020.3038713
  • Link: https://doi.org/10.1109/TED.2020.3038713
  • Department: Department of Microelectronics
  • Annotation:
    The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy (DLTS), C–V profiling, and open-circuit voltage decay (OCVD) measurements. The number of introduced defects in SiC is higher, also the degradation of carrier lifetime and carrier removal proceeds more swiftly in SiC than those in silicon. However, smaller dimensions and a higher doping level of the n-base of the SiC diode compensate for these negative effects. As a result, the SiC p-i-n diode exhibits substantially higher resistance to neutron irradiation at higher fluences when the diode loses its ON-state carrier modulation capability. SiC also shows a negligible effect of irradiation on leakage current due to the wider bandgap. One may assume a better reliability of SiC bipolar devices over the silicon in a high neutron radiation environment.

TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes

  • Authors: Reggiani, S., Balestra, L., Gnudi, A., Gnani, E., Baccarani, G., Dobrzynska, J., prof. Ing. Jan Vobecký, DrSc., Tosi, C.
  • Publication: IEEE Journal of Emerging and Selected Topics in Power Electronics. 2021, 9(2), 2155-2162. ISSN 2168-6777.
  • Year: 2021
  • DOI: 10.1109/JESTPE.2019.2921871
  • Link: https://doi.org/10.1109/JESTPE.2019.2921871
  • Department: Department of Microelectronics
  • Annotation:
    An electroactive passivation for high-voltage diodes with bevel termination has been investigated based on diamondlike carbon (DLC) films. Variations of the DLC properties, i.e., conductivity and geometry, have been investigated by experiments and numerical simulations to the purpose of gaining an insight on their influence on the diode leakage current and breakdown voltage. The role played by the DLC/Si interface has been investigated by characterizing metal-DLC-Si devices. Both Boron and Nitrogen doping have been investigated and a TCAD setup has been provided accounting for the main transport features of the DLC material with different doping configurations. A significant polarization effect has been observed in the DLC material, which improves the DLC performance as a passivation material. High-voltage diodes have been characterized and simulated with different DLC layers on top of the bevel termination in order to identify the role played by conductivity and polarization on the blocking state. The correlation of leakage current and voltage breakdown with the DLC doping and thickness is provided and explained by the TCAD simulation results.

The Bidirectional Phase Control Thyristor

  • DOI: 10.1109/TED.2020.2991690
  • Link: https://doi.org/10.1109/TED.2020.2991690
  • Department: Department of Microelectronics
  • Annotation:
    The operational principle and design aspects of the bidirectional phase control thyristor (BiPCT) are presented. The BiPCT has been invented with the intention to replace the existing bidirectional control thyristor (BCT) by bringing the advantage of increased surge current, reduced thermal resistance, and reduced processing complexity (cost). This has been achieved by the interdigitation of the anode and cathode regions of both antiparallel connected thyristors, which newly occupy the whole silicon wafer. This requires a new approach to device design, where the most demanding task consists in retaining the commutation turn-off capability and achieving the technology curve between the ON-state voltage VT and the recovery charge Qrr as close to the single phase control thyristor (PCT) as possible. As a prerequisite of reliable operation of the new device concept, short commutation turn-off time of the BiPCT is demonstrated.

Thyristors

  • Authors: prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Modern Power Electronic Devices: Physics, applications, and reliability. Stevenage, Herts: The Institution of Engineering and Technology (IET), 2020. p. 49-90. ISBN 9781785619182.
  • Year: 2020
  • DOI: 10.1049/PBPO152E_ch3
  • Link: https://doi.org/10.1049/PBPO152E_ch3
  • Department: Department of Microelectronics
  • Annotation:
    Power devices are key to modern power systems, performing essential functions such as inverting and changing voltages, buffering, and switching. The increasing complexity of power systems, with distributed renewable generation on the rise, is posing challenges to these devices. In recent years, several new devices have emerged, including wide bandgap devices, each with advantages and weaknesses depending on circumstances and applications. With a device-centric approach, this book begins by introducing the present challenges in Power Electronics, emphasizing the relevance of this discipline in today's scenario, and pointing out the key parameters to pay attention to from the application-design perspective. The next nine chapters dig into details, covering junction diodes, thyristors, silicon MOSFETs, silicon IGBTs, IGCTs, SiC diodes, SiC MOSFETs, GaN metal-insulator-semiconductor field-effect transistors (MIS-FETs), and GaN vertical transistors. A set of three chapters follow, covering key aspects from the designer's standpoint, namely module design and reliability, switching cell design, and IGBT gate-driving methods for robustness and reliability. A chapter outlining the prospects and outlooks in power electronics technology and its market concludes the book. This book addresses power device technology at the design level, by bridging the gap between semiconductor- and materials science, and power electronic applications. It provides key information for researchers working with power electronic devices and for power electronic application designers, and it is also a useful resource for academics and industrial researches working on power electronics at the system level, such as industrial machine designers and robot designers.

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV

  • DOI: 10.1002/pssa.201900312
  • Link: https://doi.org/10.1002/pssa.201900312
  • Department: Department of Microelectronics
  • Annotation:
    Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Junction Barrier Schottky power SiC diodes were irradiated with 1.05, 2.1, 5 and 10 MeV electrons with doses up to 600 kGy. Radiation defects are characterized by capacitance deep‐level transient spectroscopy and C‐V measurement. The stability of introduced defects and their effect on carrier lifetime reduction is discussed, as well.

Silicon Thyristors for Ultrahigh Power (GW) Applications (Invited Paper)

  • Authors: prof. Ing. Jan Vobecký, DrSc., Schulze, H-J., Streit, P., Niedrenostheide, F.-J., Botan, V., Przybilla,, J., Kellner-Werdehausen, U., Bellini, M.
  • Publication: IEEE Transactions on Electron Devices. 2017, 64(03), 760-768. ISSN 0018-9383.
  • Year: 2017
  • DOI: 10.1109/TED.2016.2638476
  • Link: https://doi.org/10.1109/TED.2016.2638476
  • Department: Department of Microelectronics
  • Annotation:
    Evolution of thyristor technology and the design concepts, which brought and maintain the phase control thyristor (PCT) at the top of a power pyramid, are discussed. The state-of-the-art device concepts like electrically triggered thyristor and light triggered thyristor are described for voltage classes up to 8.5 kV and maximal onstate rated current of 6 kA. Main focus is laid on the PCTs for high-voltage direct current transmission, the enabler of power transmission beyond the 10-GW level.

3D TCAD Analysis of the Effect on the dI/dt of Cathode Shorts in Phase Controlled Thyristors

  • Department: Department of Microelectronics
  • Annotation:
    3D TCAD simulation used to clarify the role of cathode shorts of thyristors on dI/dt capability.

4.5 kV Bi-mode gate Commutated Thyristor Design with High Power Technology and Shallow Anode Design

  • Authors: Lophitis, N, Antoniou, M, Udrea, F, Vemulapati, U, Arnold, M, Rahimo, M., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Piscataway, NJ: IEEE, 2016. pp. 371-374. ISSN 1946-0201. ISBN 978-1-4673-8770-5.
  • Year: 2016
  • DOI: 10.1109/ISPSD.2016.7520855
  • Link: https://doi.org/10.1109/ISPSD.2016.7520855
  • Department: Department of Microelectronics
  • Annotation:
    The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.

Radiation Damage in 4H-SiC and Its Effect on Power Device Characteristics

Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

  • DOI: 10.1109/TED.2015.2421503
  • Link: https://doi.org/10.1109/TED.2015.2421503
  • Department: Department of Microelectronics
  • Annotation:
    The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an epitaxial layer. The diodes were characterized using Deep Level Transient Spectroscopy, C–V(T), and I–V measurements without postirradiation annealing. The calibration of model parameters of a device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: 1) the Shockley–Read–Hall model with at least two deep levels on the contrary to ion irradiation and 2) a new model for enhanced mobility degradation due to radiation defects. The diode performance at high electron fluences is shown to be limited by the doping compensation at the epitaxial layer.

3.3 kV RC-IGCTs Optimized for Multi-Level Topologies

  • Authors: Vemulapsti, U. R., Arnold, M., Rahimo, M., Stiasny, T., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Proceedings PCIM EUROPE. Berlin: VDE Verlag, 2014. p. 362-369. ISBN 978-3-8007-3603-4.
  • Year: 2014

Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling

High-Power Silicon p-i-n Diode With the Radiation Enhanced Diffusion of Gold

  • DOI: 10.1109/LED.2014.2298754
  • Link: https://doi.org/10.1109/LED.2014.2298754
  • Department: Department of Microelectronics
  • Annotation:
    Fast recovery p-i-n diode with anode p-n junction modified by the radiation-enhanced diffusion (RED) of gold is presented. The RED of gold is shown to provide the local lifetime control of excess carriers, the compensation of n-base doping profile from n-type to p-type, and the enhancement of concentration of two gold-related deep levels. The deep level Au−/0 (EC − 0.549 eV) controls the low-level lifetime, whereas the gold–hydrogen pair (EC − 0.215 eV) the high-level lifetime. This feature eliminates the drawback of negative temperature coefficient of forward voltage drop of the RED with palladium and platinum, where only a single deep level, which controls the high-level lifetime, is enhanced. The RED of gold provides the maximal reverse bias safe operation area at the annealing temperature of 600 °C, whereas the RED of palladium at 650 °C.

Large-scale 3D TCAD study of the impact of shorts in Phase Controlled Thyristors

  • Authors: Bellini, M., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: 2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD). NEW YORK: The Institute of Electrical and Electronics Engineers, 2014. p. 265-268. ISSN 1946-1569. ISBN 978-1-4799-5288-5.
  • Year: 2014

ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation

  • DOI: 10.1016/j.sse.2014.02.004
  • Link: https://doi.org/10.1016/j.sse.2014.02.004
  • Department: Department of Microelectronics
  • Annotation:
    4H silicon carbide Schottky diodes were irradiated by 550 keV protons with the aim to place the ion range into the low-doped n-type epitaxial layer. The diodes were characterized using DLTS, C–V profiling and forward I–V curves. Calibration procedure of model parameters for device simulation as been carried out. It is based on modeling the doping compensation of the n-type epitaxial layer caused by the deep acceptor levels resulting from radiation damage. It is shown that the agreement of simulated and measured forward I–V curves of proton irradiated diodes can be achieved, if the profiles of deep levels are calibrated with respect to irradiation dose, the degradation of electron mobility due to charged deep levels is accounted of and the Schottky barrier height is properly adjusted. The proposed methodology introduces a starting point for exact calibration of ion irradiated SiC unipolar devices.

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and Their Effect on Power JBS SiC Diode Characteristics

Point defects in 4H-SiC epilayers introduced by neutron irradiation

Radiation defects produced in 4H-SiC epilayers by proton and alpha particle irradiation

  • DOI: 10.4028/www.scientific.net/MSF.740-742.661
  • Link: https://doi.org/10.4028/www.scientific.net/MSF.740-742.661
  • Department: Department of Microelectronics
  • Annotation:
    Electronic properties of radiation damage produced in 4H-SiC epilayer by proton and alpha particle irradiation were investigated and compared. 4H-SiC epilayers, which formed the low doped n-base of Schottky barrier power diodes, were irradiated to identical depth with 550 keV protons and 1.9 MeV alphas. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurements.

Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes

  • Department: Department of Microelectronics
  • Annotation:
    The effect of ion irradiation on electrical characteristics of SiC Schottky barrier power diodes was investigated. Diodes were irradiated from the anode side with 550 keV protons or 1.9 MeV alphas to place radiation defect maximum into the low doped epitaxial layer which formed the N-base of the diode. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and their influence on diode static and dynamic characteristics was evaluated. Results show that low fluences of both proton and alpha particle irradiation have a negligible effect on dynamic and blocking characteristics of SiC power diodes. However, in contrast with silicon devices, the ON-state resistance of SiC diodes increases significantly already at very low fluences. This negative effect is given by high introduction rates of radiation defects in SiC due to the suppressed annihilation of primary damage.

Fast Recovery Diodes for Demanding IGCT Applications

  • Authors: prof. Ing. Jan Vobecký, DrSc., Backlund, B., Setz, T., Homola, J., Radvan, L.
  • Publication: Bodo's Power Systems. 2012, 7(5), 22-25. ISSN 1863-5598.
  • Year: 2012
  • Department: Department of Microelectronics
  • Annotation:
    Fast recovery diodes, though an integral part of inverter design, have seldom received the same attention as the switching elements like IGBTs or IGCTs. As a result, Clamp, Neutral-Point Clamping and Free-Wheeling Diodes often have limited the optimal equipment design. Recognizing this, ABB has developed a new range of fast diodes offering enhanced Safe Operating Areas (SOA) and controlled (soft) recovery at very high di/dt and dv/dt levels.

Radiation Enhanced Diffusion of Nickel in Silicon Diodes

  • Department: Department of Microelectronics
  • Annotation:
    High-power P-I-N diodes (2.5 kV, 150 A) with sputtered NiV and NiCr layers at anode were implanted by 10 MeV helium ions and subsequently annealed in the range 550 - 800 oC. The devices were characterized using XPS, DLTS and OCVD. Leakage current, forward voltage drop and reverse recovery measurements were measured as well. The Radiation Enhanced Diffusion (RED) of nickel was registered after 20 min. annealing between 675 and 725 oC. The evidence was provided by depth profiling (DLTS). The effect of the RED of nickel on device electrical parameters was evaluated. Contrary to the palladium, the RED of nickel is not sufficient for the local control of carrier lifetime in power devices.

Design and Technology of High-Power Silicon Devices

  • Authors: prof. Ing. Jan Vobecký, DrSc.,
  • Publication: 2011 Proceedings of the 18th International Conference. Lodz: Technical University of Lodz, 2011. p. 17-22. ISBN 978-83-932075-1-0.
  • Year: 2011
  • Department: Department of Microelectronics
  • Annotation:
    Power semiconductors are playing a leading role in the power electronics systems,. The most important concepts of today's high-power devices are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PiN diode. Silicon-based devices are still taking evolutionary steps to gradually increase the current and voltage ratings by utilizing the technologies well established in the IC industry. Beside the well-established Si technologies, the low-power devices are increasingly utilizing the technologies of SiC and GaN. They are already on the market and in rapidly increasing volumes, but they still occupy only certain areas with relatively lower line voltages and output currents, where increased cost is balanced out by increased application demands.

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

  • DOI: 10.4028/www.scientific.net/SSP.178-179.421
  • Link: https://doi.org/10.4028/www.scientific.net/SSP.178-179.421
  • Department: Department of Microelectronics
  • Annotation:
    Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 degC. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt and Pd form deep levels in increased extent at the presence of radiation defects above 600 degC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC - 0.203 eV) and donor level V0/+ (EC - 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 degC.

Molybdenum and low-temperature annealing of a silicon power P-i-N diode

  • DOI: 10.1016/j.microrel.2010.09.021
  • Link: https://doi.org/10.1016/j.microrel.2010.09.021
  • Department: Department of Microelectronics
  • Annotation:
    High-power P+P-N-N+ diodes (VRRM = 2.5 kV, IFAV = 150 A) with sputtered Mo layer at anode were annealed in the range 550-800 C with and without the presence of radiation defects from helium implantation (10 MeV, 1 1012 cm2). The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements. The diffusion of Mo from the 50 nm thick surface layer was not registered even after 4 h between 550 and 800 C in a rough vacuum.

Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities

  • Authors: Perpina, X. P., Jorda, X. J., Vellvehi, M. V., prof. Ing. Jan Vobecký, DrSc., Mestres, N. M.
  • Publication: Journal of Electrochemical Society. 2010, 157(7), H711-H720. ISSN 0013-4651.
  • Year: 2010
  • DOI: 10.1149/1.3421974
  • Link: https://doi.org/10.1149/1.3421974
  • Department: Department of Microelectronics
  • Annotation:
    The combination of emitter control with local lifetime tailoring by ion irradiation is experimentally analyzed in fast-recovery high power diodes. For this purpose, the carrier lifetime and excess carrier concentration profiles are measured and modeled within the low doped region of unirradiated and helium irradiated diodes under low current densities (<20 A/cm2).

Doping Compensation for Increased Robustness of Fast Recovery Silicon Diodes

  • DOI: 10.1016/j.microrel.2009.09.014
  • Link: https://doi.org/10.1016/j.microrel.2009.09.014
  • Department: Department of Microelectronics
  • Annotation:
    High-power diodes with the radiation enhanced diffusion (RED) of Pd are shown to have much higher ruggedness during the reverse recovery compared to that of the Pt. Anode doping profiles measured by spreading resistance technique after a 10 MeV He implantation with subsequent annealing between 500 and 800 degC reveal different compensation effects between the Pd and Pt. The in-diffusing Pd converts the n-type background doping concentration of ND = 3 .1013 cm-3 in the position of radiation defects to that of a p-type with about one order higher concentration. The created low-doped p-layer significantly increases ruggedness of diodes during reverse recovery.

Evaluation of Low-Temperature Molybdenum Diffusion for Lifetime Control

  • Department: Department of Microelectronics
  • Annotation:
    High-power P-I-N diodes (2.5 kV, 150 A) with sputtered Mo layer at anode were annealed in the range 550 - 800 oC with and without the previous 10 MeV helium implantation. The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements.

Free Carrier Absorption Investigations on Ion Irradiated Fast Recovery Diodes

  • Authors: Perpina, X. P., Jorda, X., Vellvehi, M., prof. Ing. Jan Vobecký, DrSc., Millan, J. M.
  • Publication: Proceedings of the 22nd International Symposium on Power Semiconductor Devices & ICs. Piscataway: IEEE, 2010. p. 161-164. ISBN 978-4-88686-069-9.
  • Year: 2010
  • Department: Department of Microelectronics
  • Annotation:
    The combination of emitter control with local lifetime tailoring is experimentally analysed in fast recovery high-power diodes. For this purpose, the carrier lifetime and excess carrier oncentration profiles are measured in both unirradiated and helium irradiated diodes. Employing the experimental lifetime profiles as input parameters, the SRH model parameters of device simulator are calibrated. Excellent agreement between the simulation and experimental results is obtained.

Future Trends in High Power Devices

  • Authors: prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Proceedings Miel 2010. Niš: IEEE Electron Devices Society, 2010. p. 67-72. ISBN 978-1-4244-7198-0.
  • Year: 2010
  • Department: Department of Microelectronics
  • Annotation:
    Future Trends in High Power Devices are discussed. Future materials for power devices, PCTs, IGCTs, IGBTs, diodes and their technologies are discussed.

Fast recovery Radiation Enhanced Diffusion (RED) Diode: Palladium versus Platinum

  • Department: Department of Microelectronics
  • Annotation:
    2.5 kV fast recovery diodes based on the Radiation Enhanced Diffusion of palladium and platinum are compared in electrical parameters in the application of fast swtching.

Neon implantation and the radiation enhanced diffusion of platinum for the local lifetime control in high-power silicon diodes

  • Authors: prof. Ing. Jan Vobecký, DrSc., Ing. Vít Záhlava, CSc., Denker, A., Komarnitskyy, V.
  • Publication: Nuclear Instruments and Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms. 2009, B267(17), 2832-2838. ISSN 0168-583X.
  • Year: 2009
  • DOI: 10.1016/j.nimb.2009.06.111
  • Link: https://doi.org/10.1016/j.nimb.2009.06.111
  • Department: Department of Microelectronics
  • Annotation:
    We investigate the influence of the higher production rate of the divacancy for the purpose of radiation enhanced diffusion (RED). We also compare the standard implantation of light (He) and heavy ions (Ne) to quantify the concrete impact on diode electrical parameters.

The Bi-mode Insulated Gate Transistor (BIGT) A Potential Technology for Higher Power Applications

  • Authors: Rahimo, R. M., Kopta, K. A., Schlapbach, S. U., prof. Ing. Jan Vobecký, DrSc., Schnell, S. R., Klaka, K. S.
  • Publication: Proceedings of 21st International Symposium on Power Semiconductor Devices and ICs. Piscataway: IEEE, 2009. p. 283-286. ISSN 1943-653X. ISBN 978-1-4244-3525-8.
  • Year: 2009
  • Department: Department of Microelectronics
  • Annotation:
    Adavnced Reverse Conducting IGBT concept is presented. The device replaces the state-of-the-art two-chip IGBT/Diode approach with a single chip. The overall performance is improved.

The Radiation Enhanced Diffusion (RED) Diode Realization of a Large Area p+p-n-n+ Structure with High SOA

  • Authors: prof. Ing. Jan Vobecký, DrSc., Ing. Vít Záhlava, CSc., Hemman, H. K., Arnold, A. M., Rahimo, R. M.
  • Publication: Proceedings of 21st International Symposium on Power Semiconductor Devices and ICs. Piscataway: IEEE, 2009. p. 144-147. ISSN 1943-653X. ISBN 978-1-4244-3525-8.
  • Year: 2009
  • DOI: 10.1109/ISPSD.2009.5158022
  • Link: https://doi.org/10.1109/ISPSD.2009.5158022
  • Department: Department of Microelectronics
  • Annotation:
    We introduce a fully functional high voltage and high current p+p-n-n+ diode based on Radiation Enhanced Diffusion (RED) technology. The diode was processed on a 100 mm wafer and can safely turn off 4 and 7 kA @ 140oC @ 1500 A/us for the diameters of 51 and 91 mm, resp. The RED diode has low leakage, excellent SOA capability under free-wheeling conditions, very good softness, and very high SOA with di/dt towards 10kA/us. Clamp-less operation is presented up to 1300 A with peak power above 15 MW at 125 oC for the 91 mm diodes.

Dynamic avalanche in diodes with local lifetime control by means of palladium

Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT

  • Authors: prof. Ing. Jan Vobecký, DrSc., Rahimo, M., Kopta, A., Linder, S.
  • Publication: Proceedings of the 20th International Symposium on Power Semiconductor Devices & ICs. Piscataway: IEEE, 2008. p. 76-79. ISBN 978-1-4244-1532-8.
  • Year: 2008
  • Department: Department of Microelectronics
  • Annotation:
    The design limits of thin wafer IGBT Technology are discussed. A new buffer concept is presented including a new device called Controlled Punch Through (CPT) IGBT.

P-i-N Diode with Burried Low Doped P-layer: Impact of Radiation Enhanced Diffusion from Sputtered Palladium on Device Parameters

  • Department: Department of Microelectronics
  • Annotation:
    P-i-N Diode with burried low doped P-layer and the impact of the Radiation Enhanced Diffusion from Sputtered Palladium on device parameters is explained in more details.

Radiation Enhanced Diffusion of Implanted Palladium in a High-Power P-i-N Diode

Radiation Enhanced Diffusion of Implanted Palladium in Silicon

  • Department: Department of Microelectronics
  • Annotation:
    Radiation enhanced eiffusion of emplanted and sputtered palladium is compared in terms of defect profiles dlts spectra, lifetime, and electrical parameters of 2.5kV power PIN diodes.

The Controlled Punch Through (CPT) IGBT The Next Step in Buffer Optimization for Thin Wafer Technology

  • Authors: prof. Ing. Jan Vobecký, DrSc., Rahimo, M.R., Kopta, A.K., Linder, S.L.
  • Publication: ISPS 08 Proceedings. Praha: České vysoké učení technické v Praze, 2008. pp. 101-105. ISBN 978-80-01-04139-0.
  • Year: 2008
  • Department: Department of Microelectronics
  • Annotation:
    The Controlled Punch Through (CPT) IGBT is described as a next step in the optimization of anode buffer for Thin Wafer Technology of 1200V platform

Low-Temperature Radiation Enhanced Diffusion of Palladium and Platinum in Silicon

Radiation-Enhanced Diffusion of Palladium for a Local Lifetime Control in Power Devices

Advanced Methods for Low-Temperature In-Diffusion of Platinum in Silicon

Fast Recovery Diode with Novel Local Lifetime Control

  • Department: Department of Microelectronics
  • Annotation:
    A novel method for local lifetime control is presented using low-temperature diffusion of palladium stimulated by radiation defects.

Local Lifetime Control by Means of Palladium

Local Lifetime Control in Silicon by Radiation Controlled Diffusion of Platinum

  • Department: Department of Microelectronics
  • Annotation:
    Novel method of local lifetime control in silicon is presented. The method is based on shaping the concentration profile of substitutional palladium using low-temperature diffusion from palladium silicide stimulated by radiation defects from high-energy alpha-particle irradiation. For the first time, this process is shown functional in power devices in a wide range of annealing temperatures (450 - 725 oC). The maximal reduction of reverse recovery charge is found for low annealing temperatures (450 - 500 oC). The optimal diode electrical parameters (leakage current, reverse recovery charge, turn-off loss, dynamic avalanche charge) are found for the annealing temperature of 600 oC. The new method provides much higher thermal budget than the standard He irradiation.

Low-Temperature Radiation Controlled Diffusion of Palladium and Platinum in Silicon for Advanced Lifetime Control

  • Department: Department of Microelectronics
  • Annotation:
    Low-Temperature Radiation Controlled Diffusion of Palladium and Platinum in Silicon for Advanced Lifetime Control

Low-Temperature Radiation Controlled Diffusion of Palladium and Platinum in Silicon for Advanced Lifetime Control

  • Department: Department of Microelectronics
  • Annotation:
    This paper describes the Low-Temperature Radiation Controlled Diffusion of Palladium and Platinum in Silicon for Advanced Lifetime Control

The Effect of Ion Milling on the Parameters of Copper Contacts

  • Authors: Kolesnikov, D., prof. Ing. Jan Vobecký, DrSc., Mirovský, J.
  • Publication: ISPS 06 Proceedings. Praha: Ediční středisko ČVUT, 2006. pp. 205-209. ISSN 1751-858X. ISBN 80-01-03524-7.
  • Year: 2006

The Properties of Aluminum, Platinum Silicide and Copper Based Contacts for Silicon High-Power Devices

  • Department: Department of Microelectronics
  • Annotation:
    The study of electrical, thermo-electrical and thermo-mechanical properties of contacts for high-power diodes (PtSi, Al, TiW-Ni-Cu, TiW-Ni-Cu-Ni-Au).

Control of Platinum Profiles in Silicon by Radiation Enhanced Diffusion

Experimental Determination of Lifetime Enginnering Effects on Free-Carrier Concentration

  • Authors: Perpina, X., Jorda, X., prof. Ing. Jan Vobecký, DrSc., Vellvehi, M., Millan, J., Mestres, N.
  • Publication: EPE2005 DRESDEN 11th European Conference on Power Electronics and Applications. Brussels: EPE Association, 2005. pp. 1-6. ISBN 90-75815-08-5.
  • Year: 2005
  • Department: Department of Microelectronics
  • Annotation:
    Internal laser deflection system is used for the measurement of carrier dynamics in fast recovery diode.

Fast Recovery Diode with Local Lifetime Control Using High-Energy Platinum and Helium Implantation

  • Department: Department of Microelectronics
  • Annotation:
    Fast-recovery diode from Polovodiče a. s. is subject to novel method of local lifetime control based on low-temparature diffusion of platinum controlled by radiation defects.

High-Power P-i-N Diode with Local Lifetime Control Using Palladium Diffusion Controlled by Radiation Defects

  • Department: Department of Microelectronics
  • Annotation:
    Novel method for local lifetime control in silicon high-power diodes from Polovodiče a. s. based on low-temperature diffusion of palladium.

Low-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased Controllability

New Trends in Semiconductor Devices

  • Authors: prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Perspektivy elektroniky - sborník přednášek. Rožnov pod Radhoštěm: Sensit Holding s. r. o., 2005. p. 7-14.
  • Year: 2005
  • Department: Department of Microelectronics
  • Annotation:
    Description of the development of semiconductors with emphasis on Ge and Si. Comparison of history and presence of devices and ICs that exploit Si and Ge.

Platinum In-Diffusion Controlled by Radiation Defects for Advanced Lifetime Control in High Power Devices

  • Department: Department of Microelectronics
  • Annotation:
    Use of radiation defects for control of platinum in-diffusion in silicon for local lifetime control

Platinum In-Diffusion Controlled by Radiation Defects for Advanced Lifetime Control in High Power Silicon Devices

Radiation Enhanced Diffusion of Implanted Platinum in Silicon Guided by Helium Co-Implantation for Arbitrary Control of Platinum Profile

Reliability of Contacts for Press-Pack High-Power Devices

  • Authors: prof. Ing. Jan Vobecký, DrSc., Kolesnikov, D.
  • Publication: Microelectronics Reliability. 2005, 45(9-11), 1676-1681. ISSN 0026-2714.
  • Year: 2005
  • Department: Department of Microelectronics
  • Annotation:
    Comparison of Al and Cu layers for contacts to silicon power devices. First high-power diode reported with copper contact.

The Application of Platinum Silicide in Power Semiconductor Devices

  • Authors: Kolesnikov, D., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Proceedings of WORKSHOP 2005, Part A. Praha: CTU Publishing House, 2005. pp. 346-347. ISBN 80-01-03201-9.
  • Year: 2005

Advanced Contact Stacks for High-Power Devices

  • Authors: Kolesnikov, D., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Abstracts of 2nd Ukrainian Scientific Conference on PHYSICS of SEMICONDUCTORS. Chernivtsi: Yuriy Fedkovych Chernivtsi National University, 2004. pp. 92-93. ISBN 966-568-710-7.
  • Year: 2004

Alpha-Particle Irradiation as a Mean for Shaping the Platinum Depth Profile for Local Lifetime Control in Silicon

Alpha-Particle Irradiation as a Mean for Shaping the Platinum Depth Profile for Local Lifetime Control in Silicon Power Devices

Axial lifetime cotrol in silicon power diodes by irradiation with protons, alphas, low- and high- energy electrons

Controlled gettering of implanted platinum in silicon produced by helium co-implantation

  • Department: Department of Microelectronics
  • Annotation:
    The paper deals with controlled gettering of implanted platinum in silicon produced by helium co-implantation

Copper Versus Aluminum Contacts for Silicon Devices

  • Authors: Kolesnikov, D., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: ASDAM 2004 - Conference Proceedings. Košice: Slovak Academy of Science, 2004. p. 175-178. ISBN 0-7803-8535-7.
  • Year: 2004

Diffusion from Platinum Silicide for the Local Lifetime Control in Silicon

Direct Measurement of Self-Heating Effects at the Drift Region of 600V PT-IGBT

  • Authors: Perpina, X., Jorda, X., Godignon, P., Millan, J., von Kiedrowski, H., prof. Ing. Jan Vobecký, DrSc., Mestres, N.
  • Publication: 24th International Conference on Microelectronics. Piscataway: IEEE, 2004. pp. 149-152. ISBN 0-7803-8166-1.
  • Year: 2004

Novel Methods of Local Lifetime Control in Semiconductors

Platinum Implantation Versus Platinum Silicide for the Local Lifetime Control of Power P-i-N Diode

Proton Irradiation Matrix Experiment for Electrical Parameter Optimization of PT-IGBT Power Transistors

Proton Irradiation Matrix Experiment for Electrical Parameter Optimization of PT-IGBT Power Transistors

Sloping versus local lifetime control in silicon power P-i-N diode

Software Tools from Silvaco and ISE for Analysis and Design of Semiconductor Structures and Integrated Circuits

  • Authors: prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Počítačové prostředky pro mikrovlnnou techniku. Praha: Česká elektrotechnická společnost, 2004. pp. 6-9.
  • Year: 2004

The Analysis of Ohmic Contacts for High-Power Devices

  • Authors: Kolesnikov, D., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: 7th International Seminar on Power Semiconductor. Praha: Ediční středisko ČVUT, 2004. pp. 33-38. ISBN 80-01-03046-6.
  • Year: 2004

The Study of Contact Materials for High-Power Devices

  • Authors: Kolesnikov, D., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Proceedings of Workshop 2004. Praha: České vysoké učení technické v Praze, 2004. pp. 426-427. ISBN 80-01-02945-X.
  • Year: 2004

Accurate control of recombination centre introduction in silicon

Advanced Local Lifetime Control for Higher Reliability of Power Devices

Advanced Local Lifetime Control for Higher Reliability of Power Devices

Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation

Electrical Parameter Variation of PT-IGBT by Backside Proton Irradiation

Helium Irradiated High-Power P-i-N Diode with Low ON-State Voltage Drop

IGBT Lifetime Killing Process Design Using Simulation Tools

Impact of the Electron, Proton and Helium Irradiation on the Forward I-V Characteristics of High-Power P-i-N Diode

  • Department: Department of Microelectronics
  • Annotation:
    Experimental and simulation work showing the impact of irradiation on device characteristocs in a wide temperature range.

Improvement of PT-IGBT Switching Speed by Backside Proton Irradiation

New Passivation Materials Power Semiconductors

  • Authors: Vacková, S., Gurovič, J., prof. Ing. Jan Vobecký, DrSc., Černý, F., Macková, A., Trchová, M., Kolesnikov, D.
  • Publication: Proceedings of Workshop 2003. Praha: České vysoké učení technické v Praze, 2003. pp. 124-125. ISBN 80-01-02708-2.
  • Year: 2003

Platinum Silicide Contacts for High-Power Devices

  • Authors: prof. Ing. Jan Vobecký, DrSc., Kolesnikov, D.
  • Publication: Electronic Devices and Systems 03 - Proceedings. Brno: VUT v Brně, FEI, Ústav mikroelektroniky, 2003. pp. 291-294. ISBN 80-214-2452-4.
  • Year: 2003

The Application of Platinum-Silicide Anode Layer to Decrease the Static and Turn-Off Losses in High-Power P-i-N Diode

The Novel Concept of the Local Lifetime Control for High-Power Devices

The Novel Concept of the Local Lifetime Control for High-Power Devices

10 Years of the CS Section IEEE

Axial Lifetime Control by Irradiation with Protons, Alphas, Low- and High-Energy Electrons: Impact on Silicon Power Diode Parameters

Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy

Forward I-V Characteristics of the Electron, Proton and Helium Irradiated High-Power P-i-N Diodes

High-Power Devices - A New Challenge to Thin Films

High-Power P-i-N Diode With the Local Lifetime Control Based on the Proximity Gettering of Platinum

New Methods of Local Lifetime Control

Optimum Lifetime Structuring in Silicon Power Diodes by Means of Various Irradiation Techniques

Parameter Optimization of the 600V PT IGBT Using the Backside Proton Irradiation

Study of Dynamic Avalanche

  • Authors: Vít, J., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Proceedings of Workshop 2002. Praha: České vysoké učení technické v Praze, 2002. pp. 400-401. ISBN 80-01-02511-X.
  • Year: 2002

Study of Special Radiation Damage of Si Detectors

  • Authors: Solar, M., Sopko, B., Chren, D., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: Proceedings of the 8th International Workshop on Applied Physics of Condensed Matter. Liptovský Mikuláš: Vojenská akadémia, 2002. pp. 110-113. ISBN 80-8040-186-1.
  • Year: 2002

Current Filamentation under Resistive Switching Reverse Recovery

Electronics - Devices and Circuits, Principles and Examples

Local Lifetime Control by Light Ion Irradiation: Impact on Blocking Capability of Power P-i-N Diode

Optimum Lifetime Structuring in Silicon Power Diodes by Means of Various Irradiation Techniques

Study of Power Diodes for Higher Reliability and Energy Savings

The Dynamic Avalanche under Resistive Switching Reverse Recovery

A New Degree of Freedom in Diode Optimization: Arbitrary Axial Lifetime Profiles by Means of Ion Irradiation

Advanced Design of Lifetime Control for High-Power Devices in TCAD Environment

Blocking Capability of Power P-i-N Diodes Irradiated by Hydrogen and Helium Ions

Crossing point current of electron and proton irradiated power P-i-N diodes

Crossing Point Current of Power P-i-N Diodes: Impact of Lifetime Treatment

Effect of Defects Produced by MeV H and He Ion Implantation on Characteristics of Power Silicon P-i-N Diodes

Effect of Defects Produced by MeV H and He Ion Implantation on Characteristics of Power Silicon P-i-N Diodes

Impact of Lifetime Control on the Reverse Recovery of High-Power P-i-N Diode

Lifetime Engineering in High-Power Devices

Local Lifetime Control in Modern Power Semiconductor Devices

  • Authors: prof. Ing. Pavel Hazdra, CSc., prof. Ing. Jan Vobecký, DrSc., Rubeš, J.
  • Publication: Sborník příspěvků ze semináře Odborné skupiny Polovodiče Fyzikální vědecké sekce Jednoty českých matematiků a fyziků. Praha: Jednota českých matematiků a fyziků, 2000. pp. 39-40. ISBN 80-7015-720-8.
  • Year: 2000
  • Department: Department of Microelectronics
  • Annotation:
    Application of ion irradiation fo local lifetime control, process, defect diagnostics, simulation, and applications

New Recombination Centers for Modern Power Electronics

Advanced Design of Lifetime Control for High-Power Devices in TCAD Environment

  • Department: Department of Microelectronics
  • Annotation:
    Speciální návrh křemíkových výkonových součástek pomocí lokálního řízení doby života

Advanced Design of Lifetime Control for High-Power Devices in TCAD Environment

Divacancy Profiles in MeV Helium Irradiated Silicon from Reverse I-V Measurement

HVCTS - High Voltage Current Transient Spectroscopy

Nondestructive Defect Characterization and Engineering in Contemporary Silicon Power Devices

  • Department: Department of Microelectronics
  • Annotation:
    Defect engineering using different irradiation techniques for lifetime control in contemporary silicon power diodes is presented. Deep levels produced by high energy particle irradiation, electrons, protons and alphas, are characterized within the full depth of real silicon power diode (hundreds of μm) by means of newly developed non-destructive characterization tools: I-V profiling and high voltage current transient spectroscopy. In the light of received results, the advantages and drawbacks of different lifetime control techniques are discussed.

Open Circuit Voltage Decay Lifetime of Ion Irradiated Devices

Radiation Defect Profiling in Silicon Devices

Application-Specific Fast-Recovery Diode: Design and Performance

Diagnostics of Radiation Defect Profiles in Silicon

Free-Wheeling Diodes with Improved Reverse Recovery by Combined Electron and Proton Irradiation

Measurement of Reverse Current for Radiation Defect Pofiling

OCVD Lifetime of Ion Irradiated P-i-N Diodes

Optimisation of a High-power P-I-N Diode for Advanced Switching Applications

Application of High Energy Ion Beams for Local Lifetime Control in Silicon

Investigation of Deep Level Capture Coefficients in Ion Irradiated Silicon

Ion Beam Synthesis of SiGe Layers

Simulation of Ion Irradiated Power Devices in ATLAS

Application of High Energy Ion Beams for Local Lifetime Control in Silicon

Future Trends in Local Lifetime Control

Impact of Defect Parameters on Power Device Modelling

Lifetime Profiles of Ion Irradiated Devices

Optimization of Power Diode Characteristics by Means of Ion Iradiation

2-D Simulation of Ion Irradiated Silicon Power Devices

Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices

Application of Defect Related Generation Current for Low-Dose Ion Implantation Monitoring

Defects Generated by Dispersive High Energy Ion Beam

Defects Generated by Electron and Alpha Irradiation in Silicon

Lifetime Control by Energy-Dispersed Ion Irradiation

New Methods for ISFET Light Sensitivity Reduction

  • Authors: Neužil, P., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: The 8th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX. Stockholm: Royal Institute of Technology, 1995. p. 909-912.
  • Year: 1995

Accurate Simulation of Combined Electron and Ion Irradiated Silicon Devices for Local Lifetime Tailoring

Accurate Simulation of Fast Ion Irradiated Power Devices

Big Hopes for Application of Radiation Damages in Semiconductor Devices

Defects Generated by Dispersive High Energy Ion Beam

Electron and Ion Irradiation of Silicon Devices for Local Lifetime Tailoring

Measurements of Failure Phenomena in Inductively Loaded Multi-Cathode GTO Thyristors

  • Authors: Bleichner, H., Rosling, M., Bakowski, M., prof. Ing. Jan Vobecký, DrSc., Nordlander, E.
  • Publication: IEEE Transactions on Electron Devices. 1994, 41(2), 251-257. ISSN 0018-9383.
  • Year: 1994

A New Approach to the Simulation of Small-Signal Current Gains of pnpn Structures

  • Authors: Hátle, M., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: IEEE Transactions on Electron Devices. 1993, 40(10), 1864-1866. ISSN 0018-9383.
  • Year: 1993

A Time Dependent Two-Dimensional Analysis of the Turn-off Process in a Gate Turn-Off Thyristor (GTO)

  • Authors: prof. Ing. Jan Vobecký, DrSc., Bleichner, H., Rosling, M., Norlander, E.
  • Publication: IEEE Transactions on Electron Devices. 1993, 40(12), 2352-2358. ISSN 0018-9383.
  • Year: 1993

Advanced Methods for Diagnostics of the GTO Thyristor

Application of Radiation Damages in Semiconductors - Processing

Modeling of Localized Lifetime Tailoring in Silicon Devices

Modelling of Localized Lifetime Tailoring in Silicon Devices

TCAD - A Progressive Tool for Engineers

A Study of Turn-Off Limitations and failure Mechanisms in GTO Thyristors by Means of 2-D Time Resolved Optical Mesurements

  • Authors: Bleichner, H., Bakowski, M., Rosling, M., prof. Ing. Jan Vobecký, DrSc., Nordlander, E., Lundqvist, M., Berg, S.
  • Publication: Solid-State Electronics. 1992, 35(11), 1683-1695. ISSN 0038-1101.
  • Year: 1992

Infrared observation of gate Torn-Off Thyristor Segment Parameter Nonuniformity

  • Authors: Hatle, M., prof. Ing. Jan Vobecký, DrSc.,
  • Publication: IEEE Transactions on Electron Devices. 1990, 33 1169-1171. ISSN 0018-9383.
  • Year: 1990

Responsible person Ing. Mgr. Radovan Suk